Samsung provided an update on its data center portfolio in its latest earnings, confirming that next-gen HBM3E, DDR5 & V-NAND are coming in Q2. Samsung Has Multiple Next-Gen Data Center Products Coming This Year: 12-Hi HBM3E, 128 GB DDR5, 9th Gen V-NAND & More The South Korean giant reported that it was witnessing record growth in the AI domain and will be pushing forward with multiple new product lines in this segment. First up, Samsung has started the mass production of its HBM3E “Shinebolt” memory, which will first ship in 8-Hi stacks this month & will be followed by the […]
Read full article at https://wccftech.com/samsung-hbm3e-12-hi-mass-production-q2-128-gb-ddr5-64-tb-ssd-9th-gen-v-nand/
