The gate-all-around technology will reportedly be applied to Samsung’s 2nm chips, as the Korean’s foundry division aims to commence mass production of this node sometime in 2025. Industry sources have stated that the company will present a paper on the third-generation GAA characteristics applied in the 2nm (SF2) process at the ‘VLSI Symposium 2024,’ which is a global semiconductor conference that is scheduled to be held in Hawaii from June 16-20. Samsung has yet to strike gold with its 3nm GAA node, largely thanks to poor yields that make a partnership for other companies unviable The Korean giant announced its […]
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